THE INTERPRETATION OF NEAR EDGE STRUCTURE

被引：48

作者：

REZ, P

WENG, XD

HONG, M

机构：

[1] DEPT PHYS,CAMBRIDGE CH3 0HE,ENGLAND

[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1991年 / 2卷 / 2-3期

关键词：

D O I：

10.1051/mmm:0199100202-3014300

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The near edge structure up to 30 eV above the ionisation threshold of inner shell edges can be interpreted either as the result of interference of waves scattered from neighbouring atoms or in terms of the local projected conduction band density of states. Methods of calculating near edge structure based on both these viewpoints will be discussed and applications to the near edge structures observed in semiconductors and insulators reviewed. Particular emphasis will be given to those cases where the calculations lead to a simple interpretation of near edge structure.

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页码：143 / 151

页数：9

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