ARTIFICIAL REFRACTIVE-INDEX GRATINGS MANUFACTURING USING ELECTRON-BEAM LITHOGRAPHY

被引：5

作者：

BABIN, S

TOMNIKOV, A

机构：

[1] Univ Erlangen-Nuernberg, Erlangen, Germany

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

Electron beam lithography - Electron beams - Fabrication - Light - Microelectronics - Refractive index;

D O I：

10.1016/0167-9317(94)00081-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new physical principle for creation of optical elements which allows the fabrication of structures with an artificial refractive index was developed. It needs the manufacturing of structures with feature sizes much less than the wavelength of the incident light. The technique for the experimental determination of the proximity function parameters in electron lithography eliminating the influence of the resist development process is presented. The correction of proximity effects was made fora number of zero order gratings and artificial index gratings fabrication. The Fresnel zone plate was manufactured with an artificially varying phase retardation.

引用

页码：167 / 170

页数：4

共 14 条

[1]

Mikolas, Bojko, Graighead, Haas, Honey, Bare, Fabrication of aspheric high numerical aperture reflective diffractive optic elements using electron beam lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 12 B, 1, (1994)

[2]

Stork, Streibl, Haidner, Kipfer, Artificial distributed-index media fabricated by zero-order gratings, Optics Letters, 16, 24 N, (1991)

[3]

Moharam, Gaylord, J.O.S.A., 72, (1982)

[4]

Gale, Opt. Comm., 18, (1976)

[5]

Bouchitle, Petit, Homogenization Techniques as Applied in the Electromagnetic Theory of Gratings, Electromagnetics, 5, (1985)

[6]

Rishton, Kern, Point exposure distribution measurements for proximity correction in electron beam lithography on a sub-100 nm scale, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5 B, 1, (1987)

[7]

Stewens, Jonkheere, Froyen, Decoutere, Lanner, Proc. Int. Conf. “Microelectronic Engineering”, (1986)

[8]

Babin, Svintsov, Microelectronic Engineering, 17, (1992)

[9]

Rosenfield, Rishton, Kern, Seeger, Whiting, Microelectronic Engineering, 13, (1991)

[10]

Babin, Int. Conf. “Microlithography'94”, Proc. SPIE, 2194, (1994)

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