EFFECT OF HEAT TREATMENT ON INTERFACE CHARACTERISTICS IN REACTIVELY SPUTTERED AL2O3-SI STRUCTURES

被引：6

作者：

HATTORI, T

IWAUCHI, S

NAGANO, K

TANAKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 02期

关键词：

D O I：

10.1143/JJAP.10.203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：203 / &

共 13 条

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[2]

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NAGANO, K ;

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[6]

NAGANO K, 1969, JAPAN J APPL PHYS S, V39, P132

[7] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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[8] CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE [J].

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[9]

SEDGWICK TO, 1968, IEEE T ELECTRON DEV, VED15, P1015

[10] INTERFACE CHARACTERISTICS OF REACTIVELY SPUTTERED AL2O3-SI STRUCTURE [J].

TANAKA, T ;

IWAUCHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) :730-+

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