MONOLITHIC RESONANT PHOTORECEIVER USING LOCAL EPITAXY AND LARGE LATTICE MISMATCH MATERIAL .3.5.

被引：3

作者：

ABOULHOUDA, S

VILCOT, JP

RAZEGHI, M

DECOSTER, D

FRANCOIS, M

MARICOT, S

ABOUDOU, A

机构：

[1] Centre Hyperfréquences et Semiconducteurs, URA CNRS 287, Université des Sciences et Techniques de Lille‐Flandres‐Artois, Villeneuve D'Ascq

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1991年 / 4卷 / 06期

关键词：

MONOLITHIC CIRCUITS; PHOTORECEIVERS; OPTOELECTRONICS; MESFETS;

D O I：

10.1002/mop.4650040602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that local and large lattice mismatch expitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long-wavelength metal-semiconductor-metal photodetector, a GaAs MESFET preamplifer, and an inductor. The GaAs/GaInAs heteroepitaxy needed for the photodetector was selectively grown using a SiO2 mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50-OMEGA resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link.

引用

页码：217 / 219

页数：3

共 12 条

[1]

Razeghi M., Defour M., Blondeau R., Omnes F., Maurel P., Acher O., Appl. Phys. Lett., 53, (1988)

[2]

Dentai A.G., Campbell J.C., Joyner C.H., Qua G.J., Electron. Lett., 23, (1987)

[3]

Schumacher H., Leblanc H.P., Soole J., Bhat R., IEEE Electron. Device. Lett., 9 EDL, (1988)

[4]

Morkoc H., Peng C.K., Henderson T., Kopp W., Fischer R., Erickson L.P., Longerbone M.D., Youngman R.C., High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy, IEEE Electron Device Letters, 6 EDL, (1985)

[5]

Razeghi M., Ramdani J., Verriele H., Decoster D., Constant M., Vanbremeersch J., Appl. Phys. Lett., 49, (1986)

[6]

Suzuki A., Itoh T., Terakada T., Kasahara K., Asano K., Inomoto Y., Ishihara H., Torikai T., Fujita S., Electron. Lett., 23, (1987)

[7]

Jones S.H., Lou M., J. Electrochem. Soc., 134, (1987)

[8]

Karam N.H., Liu H., Yoshida I., Bedair S.M., Appl. Phys. Lett., 53, (1988)

[9]

Hussien S.A., Fahnry A.A., El-Masry N.A., Bedair S.M., J. Appl. Phys., 67, (1990)

[10]

Darcie T.E., Kasper B.L., Talman J.R., Burrus C.A., J. Lightwave Technol., 6, 4, (1988)

← 1 2 →