THE EFFECT OF SURFACE SPECIES ON THE PHOTOLUMINESCENCE OF POROUS SILICON

被引：25

作者：

LI, KH ^{[1
]}

TSAI, C ^{[1
]}

CAMPBELL, JC ^{[1
]}

KOVAR, M ^{[1
]}

WHITE, JM ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM & BIOCHEM,AUSTIN,TX 78712

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 04期

关键词：

PHOTOLUMINESCENCE; POROUS SI; SURFACE CHEMISTRY;

D O I：

10.1007/BF02671222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photoluminescence of porous Si immersed in alcohol exhibits a blue shift and a marked decrease in intensity relatively to dry, as-anodized wafers. However, when the immersed samples are treated with ultraviolet (UV) light for a few minutes, the photoluminescence (PL) peak shifts to longer wavelength. Fourier transform infrared spectroscopy reveals that alkoxy surface species and silicon hydride species backbonded to oxygen atoms appear on the UV-treated samples. Furthermore, the PL characteristics and surface species of the UV-treated samples can be recovered to those of as-anodized wafers by dipping in hydrofluoric acid. These results point out the importance of surface chemistry in the luminescence process of porous Si.

引用

页码：409 / 412

页数：4

共 21 条

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