POSITION-DEPENDENT EXCITON-PHOTON MODE SPLITTING IN A MICROCAVITY

被引：10

作者：

FREY, A

JUNGK, G

HEY, R

机构：

[1] Paul-Drude-Institute für Festkörperelektronik, D-10117 Berlin

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 17期

关键词：

D O I：

10.1063/1.111677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exciton-photon mode interaction of In0.1Ga0.9As quantum wells (QWs) in a lambda/2 microcavity has been studied using classical linear dispersion theory. In a system consisting of a GaAs cavity with one QW surrounded by Al0.3Ga0.7As/AlAs and GaAs/AlAs Bragg reflectors grown by molecular beam epitaxy, the interaction is found to be strongest at the ends of the cavity and is vanishing in the center of it. The behavior in the center position is changed by inserting a second QW into the cavity. Reflectance and photoluminescence measurements show modulation effects by QW absorption in accordance with the calculations.

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页码：2214 / 2216

页数：3

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