CHARGE CARRIER DENSITIES AND MOBILITIES IN BISMUTH

被引:3
作者
JAIN, AL
SURI, SK
TANAKA, K
机构
[1] Department of Electrical Engineering, University of Nebraska, Lincoln, NE
[2] Department of Materials Science, State University of New York at Stony Brook, Stony Brook, NY
关键词
D O I
10.1016/0375-9601(68)90480-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The temperature dependence of the galvanomagnetic tensor in bismuth has been determined in the temperature range 50 - 90°K. An approximate analysis of the data using the two band model indicates that the electron mobility components μ1, μ3 and μ4 vary as T-2 while the hole mobility component ν1 ∼ T-1.6. © 1968.
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页码:435 / &
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