SOLID-STATE MEMORY DEVELOPMENT IN IBM

被引：15

作者：

PUGH, EW

HENLE, RA

CRITCHLOW, DL

RUSSELL, LA

机构：

[1] IBM CORP, E FISHKILL FACIL, GEN TECHNOL DIV LAB, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA

[2] IBM CORP, WHITE PLAINS, NY 10604 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1981年 / 25卷 / 05期

关键词：

Compendex;

D O I：

10.1147/rd.255.0585

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

DATA STORAGE, SEMICONDUCTOR

引用

页码：585 / 602

页数：18

共 178 条

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[2]

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[3]

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[4]

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[5]

ALBERSSCHOENBERG E, 1961, Patent No. 2981689

[6]

ALLEN CA, 1961, IRE T ELECTRON COM, VEC10, P233

[7]

Almasi G. S., 1971, AIP Conference Proceedings, V5, P220

[8] SIGNAL SENSING AND MAGNETIC FILM MEMORY ARRAY DESIGN [J].

ALMASI, GS ;

GENOVESE, ER .

IEEE TRANSACTIONS ON MAGNETICS, 1970, MAG6 (04) :778-&

[9] MAGNETORESISTIVE DETECTOR FOR BUBBLE DOMAINS [J].

ALMASI, GS ;

KEEFE, GE ;

LIN, YS ;

THOMPSON, DA .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (04) :1268-&

[10] ANALYTICAL DESIGN THEORY FOR FIELD-ACCESS BUBBLE-DOMAIN DEVICES [J].

ALMASI, GS ;

LIN, YS .

IEEE TRANSACTIONS ON MAGNETICS, 1976, 12 (03) :160-202

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