HOPPING TRANSPORT IN THE 3-SITE MODEL IN THE PRESENCE OF ELECTRIC AND MAGNETIC-FIELDS - RATE-EQUATION AND TRANSPORT PHENOMENA FOR SMALL POLARONS

被引:13
作者
BOTTGER, H [1 ]
BRYKSIN, VV [1 ]
SCHULZ, F [1 ]
机构
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 01期
关键词
D O I
10.1103/PhysRevB.48.161
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A rate equation for the electronic density at the sites in the presence of electric and magnetic fields has been formulated for any strength of coupling with phonons, where three-site transitions are included. A classification of the irreducible diagrams is given, so that the transition probabilities contain also phonon-free processes. It has been shown that the sign of the magnetoresistance changes for jumps far from the Fermi level, if one goes over from electrons to holes. Generally speaking, it is not justified to treat the Hall effect and the magnetoresistance in disordered systems independently within the presented formalism. A concrete calculation of the current in ordered systems has been carried out in the small-polaron model for any strength of the fields E and H.
引用
收藏
页码:161 / 171
页数:11
相关论文
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