ELECTRON-DRIFT MOBILITY IN DOPED AMORPHOUS-SILICON

被引：58

作者：

STREET, RA

KAKALIOS, J

HACK, M

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.38.5603

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5603 / 5609

页数：7

共 20 条

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