SINGLE-CRYSTAL GROWTH AND CHARACTERIZATION OF ZINC PHOSPHIDE

被引：9

作者：

KUROYANAGI, A

SUDA, T

机构：

[1] Department of Electronic Engineering, University of Industrial Technology, Sagamihara, Kanagawa, 229

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 100卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(90)90601-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Zinc phosphide (Zn3P2) was synthesized by a direct reaction between Zn and P, and purified through sublimation three times. Large single crystals were grown using a closed-tube horizontal vapor transport. A peak temperature of 900°C and a furnace traveling rate of 0.12 mm/h were used for the crystal growth. The typical size of the Zn3P2 crystals is 1.1 cm in diameter and 5-7 cm long. The growth direction has been investigated by the X-ray Laue method and is found to lie along [201]. An electrical resistivity of 600 Ω cm and a Hall mobility of 5 cm2 V-1 s-1 are obtained for the as-grown crystals. The resistivity decreases by the heat treatment in phosphorus ambient to the order of several Ω cm. © 1990.

引用

页码：1 / 4

页数：4

共 15 条

[1] POLYCRYSTALLINE ZN3P2 SCHOTTKY-BARRIER SOLAR-CELLS [J].