ATOMIC SCALE MORPHOLOGY OF THIN AU(ZN)/GAAS OHMIC CONTACTS

被引：4

作者：

KAMINSKA, E

PIOTROWSKA, A

ZARECKA, R

BARCZ, A

MIZERA, E

KWIATKOWSKI, S

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

[2] INST NUCL STUDIES,PL-00682 WARSAW,POLAND

来源：

ACTA PHYSICA POLONICA A | 1992年 / 82卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.82.853

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very dose vicinity of the interface.

引用

页码：853 / 858

页数：6