KINETICS OF TUNNEL-ASSISTED MULTILAYER CHEMISORPTION ON HOMOGENEOUS SURFACES

被引：4

作者：

CEROFOLINI, GF

机构：

[1] Istituto Guido Donegani, EniChem, Novara

来源：

JOURNAL OF COLLOID AND INTERFACE SCIENCE | 1994年 / 167卷 / 02期

关键词：

D O I：

10.1006/jcis.1994.1380

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The kinetics of multilayer chemisorption (e.g., oxidation of valve metals) by tunneling through the chemisorbed layer from a weakly bonded surface state to a strongly bonded interface state are described. These kinetics have a stepped behavior, but simulate in the mean the Elovich isotherm. The model is applied to room-temperature wet oxidation of single crystalline silicon. (C) 1994 Academic Press, Inc.

引用

页码：453 / 456

页数：4

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