NONDEGENERATE OPTICAL KERR-EFFECT IN SEMICONDUCTORS

被引:64
作者
SHEIKBAHAE, M
WANG, J
VANSTRYLAND, EW
机构
[1] Center for Research in Electro-Optics and Lasers, University of Central Florida, Orlando
基金
美国国家科学基金会;
关键词
D O I
10.1109/3.283767
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We calculate the nondegenerate bound electronic nonlinear refractive index n2(omega1; omega2) (i.e., an index change at frequency omega1 due to the presence of a beam at frequency omega2) in semiconductors. We calculate this nonlinearity and its dispersion using a Kramers-Kronig transformation on the calculated nondegenerate nonlinear absorption spectrum due to two-photon absorption, electronic Raman and optical Stark effects. The calculated n2 values and their dispersion are compared to new experimental values for ZnSe and ZnS obtained using a 2-color Z-scan.
引用
收藏
页码:249 / 255
页数:7
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