THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS

被引：15

作者：

LI, Y

KILNER, JA

CHATER, RJ

HEMMENT, PLF

NEJIM, A

ROBINSON, AK

REESON, KJ

MARSH, CD

BOOKER, GR

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 06期

关键词：

D O I：

10.1149/1.2221642

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The critical doses required to form a continuous buried stoichiometric oxide layer for 70 keV oxygen implantation either during implantation, PHI(c)I, or after implantation and annealing, PHI(c)A, are almost-equal-to 7 X 10(17) O+/cm2 and almost-equal-to 3 X 10(17) O+/cm2, respectively. The dislocation density in the silicon overlayer and the distribution and density of silicon islands in the buried SiO2 layer of the annealed (70 KeV) SIMOX (separated by implantation of oxygen) samples are strongly dependent on the oxygen dose (PHI) and the target temperature (T(i)). Good quality thin-film SIMOX layers with a low threading dislocation density in the silicon overlayer and low density of silicon islands in the buried SiO2 layer have been produced by implantation of 3.3 X 10(17) O+/cm2 at 680-degrees-C.

引用

页码：1780 / 1786

页数：7

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