OPTICAL MODULATION BY ACOUSTOELECTRIC DOMAINS IN P-GASB

被引:29
作者
KUMAR, CS
SLIVA, PO
BRAY, R
机构
来源
PHYSICAL REVIEW | 1968年 / 169卷 / 03期
关键词
D O I
10.1103/PhysRev.169.680
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:680 / &
相关论文
共 31 条
[1]   ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB [J].
BAXTER, RD ;
BATE, RT ;
REID, FJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) :41-&
[2]   ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].
BECKER, WM ;
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&
[3]  
BIR GL, 1962, SOV PHYS-SOL STATE, V3, P2221
[4]  
BIR GL, 1961, FIZ TVERD TELA, V3, P3050
[5]  
BOER KW, 1965, PHYS REV, V139, P1949
[6]   RELAXATION DES DOMAINES DE HAUT CHAMP ET EMISSION DE LUMIERE ASSOCIEES AUX OSCILLATIONS DE COURANT DANS GAAS [J].
BONNOT, A .
PHYSICA STATUS SOLIDI, 1967, 21 (02) :525-&
[7]  
BRAY R, 1966, J PHYS SOC JPN, VS 21, P483
[8]   OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].
DIXON, JR ;
ELLIS, JM .
PHYSICAL REVIEW, 1961, 123 (05) :1560-&
[9]   EFFECT OF PRESSURE ON ABSORPTION EDGES OF SOME III-V, II-VI, AND I-VII COMPOUNDS [J].
EDWARDS, AL ;
DRICKAMER, HG .
PHYSICAL REVIEW, 1961, 122 (04) :1149-&
[10]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905