A NONSATURATING VELOCITY-FIELD APPROXIMATION FOR IMPROVED INVARIANT DOMAIN ANALYSIS OF GUNN EFFECT DEVICES

被引：4

作者：

BOHN, PP

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 09期

关键词：

D O I：

10.1109/PROC.1970.7958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1397 / &

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[3] DISPLACED MAXWELLIAN CALCULATION OF TRANSPORT IN N-TYPE GAAS [J].

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PHYSICAL REVIEW, 1969, 178 (03) :1319-+

[4]

KROEMER H, 1968, IEEE DEVICE, VED15, P819

KURU, I ;

ROBSON, PN ;

KINO, GS .

[6]

ROBROCK RB, 1970, IEEE T, VED17, P93

[7] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE [J].

RUCH, JG ;

KINO, GS .