CURRENT-INDUCED DEGRADATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS SUPPRESSION BY THERMAL ANNEALING IN AS OVERPRESSURE

被引：15

作者：

NAKAJIMA, O

ITO, H

NITTONO, T

NAGATA, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 08期

关键词：

GAAS; ALGAAS; HETEROJUNCTION; BIPOLAR TRANSISTOR; HBT; BE-DOPED; C-DOPED; DEGRADATION; ON-VOLTAGE-SHIFT; BIAS STRESS TEST;

D O I：

10.1143/JJAP.31.2343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-induced degradation of current-voltage (I-V) characteristics in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with Be-doped base layers is investigated. Large shifts of emitter-base on-voltage (DELTAV(BE)) are observed during high current operation. The behavior of degradation is qualitatively explained in terms of interstitial Be diffusion in combination with the electron-hole recombination process. Thermal annealing in As overpressure can successfully stabilize the characteristics. Degradation is not observed in AlGaAs/GaAs HBTs with C-doped base layers without the Zn diffusion process.

引用

页码：2343 / 2348

页数：6

共 8 条

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