JOSEPHSON-JUNCTION SINGLE PLAQUETTE AS A MODEL FOR THE HIGH-TC GRAIN-BOUNDARY JUNCTIONS

被引：5

作者：

KIM, JH ^{[1
]}

SHIN, HJ ^{[1
]}

LEE, HJ ^{[1
]}

机构：

[1] RES INST IND SCI & TECHNOL,DIV BASIC SCI RES,KYUNGBUK 790600,SOUTH KOREA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.49.6432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have calculated the widths of the integer and half-integer voltage steps in a square Josephson-junction single plaquette as a function of ac level for various filling factors f. The characteristic features of the step widths, corresponding to n = 0, 1/2, and 1, show clear differences between small and large values of f, and are in reasonable agreement with the results observed experimentally in high-T(c) single grain-boundary junctions. When the inhomogeneity in the critical current of the junctions parallel and perpendicular to the external current is introduced to the model the equations of motion for a single plaquette become equivalent to those of a dc superconducting quantum interference device in the limit of small loop inductance.

引用

页码：6432 / 6435

页数：4

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