PRESSURE-INDUCED TRANSFORMATION BEHAVIOR OF SOME QUASI-BINARY ALLOYS OF INSB

Two systems, InSbInAs and InSbGaSb, with compositions to 20 mol.% alloying compound were studied to 70 kbar at room temperature. Both InAs and GaSb additions were found to raise the transformation pressure of InSb, but each behaves differently. Possible elevated pressure phase equilibria is considered. A relationship between transformation and electronic structure is indicated based on the internal energy change at transformation being a relatively uniform perecentage of the electronic energy gap of the low pressure, semiconductor phase. Instability of the zinc-blende form at a critical percentage of the bonding energy is suggested. © 1969.