A WIDE-BAND COMPARISON OF ALUMINUM NITRIDE, ALUMINA, AND BERYLLIA MICROCIRCUIT SUBSTRATES

被引：2

作者：

FARZANEHFARD, H

HE, JQ

ELSHABINIRIAD, A

机构：

[1] Bradley Department of Electrical Engineering Virginia Polytechnic Institute of and State University, Blacksburg, VA

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1991年 / 40卷 / 02期

关键词：

D O I：

10.1109/TIM.1990.1032993

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum nitride (AIN) ceramics are emerging as new substrate materials for hybrid circuit applications. This paper presents a method to measure, effectively and accurately, the dielectric constant of AlN and other ceramic substrates, over a wide range of frequencies (from dc to a few gigahertz). Also a wide-band circuit application is demonstrated on these AlN ceramic substrates. Measurement results indicate a superior performance of AlN substrate material as compared to conventional 96% alumina (Al2O3).

引用

页码：490 / 492

页数：3

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