ELECTRON STATES AND DISORDER IN AMORPHOUS GE FILMS STUDIED BY SECONDARY-ELECTRON EMISSION-SPECTROSCOPY

被引：13

作者：

WILLIS, RF

FITTON, B

LAUDE, LD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1972年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.29.220

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：220 / &

共 28 条

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[10] ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM AND SILICON [J].

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