NEW MESH TYPE SILICON PHOTODIODE AND ITS PERFORMANCE

被引：2

作者：

KASHIWAGI, T

DOKE, T

KIKUCHI, J

ISHIDA, N

ONABE, H

OBINATA, M

机构：

[1] SEIKEI UNIV,DEPT ENGN,MUSASHINO,TOKYO 180,JAPAN

[2] RAYTECH CORP,UTSUNOMIYA,TOCHIGI 32103,JAPAN

[3] TOHNIC CO LTD,CHIGASAKI,KANAGAWA 253,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 327卷 / 01期

关键词：

D O I：

10.1016/0168-9002(93)91431-L

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A large area silicon photodiode (approximately 11 cm2) for the detection of ultraviolet photons has been fabricated by a photo engraving process (PEP). A quantum efficiency of 110% was achieved for the scintillation light (175 nm) in liquid xenon excited by 5.486 MeV alpha-particles from Am-241.

引用

页码：148 / 151

页数：4

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