A 1-GHZ BICMOS RF FRONT-END IC

被引：80

作者：

MEYER, RG

MACK, WD

机构：

[1] PHILIPS SEMICOND,SUNNYVALE,CA 94086

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 03期

关键词：

D O I：

10.1109/4.278360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is -10 dBm. The n-mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure.

引用

页码：350 / 355

页数：6

共 6 条

[1]

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[2]

GRAY PR, 1993, ANAL DESIGN ANALOG I, pCH11

[3]

Hull C. D., 1992, International Journal of High Speed Electronics, V3, P53, DOI 10.1142/S0129156492000047

[4]

PEDERSON D, 1991, ANALOG INTEGRATED CI

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STEYAERT, M ;

ROOVERS, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (08) :1194-1197

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