QUENCHING OF EXCITONIC OPTICAL-TRANSITIONS BY EXCESS ELECTRONS IN GAAS QUANTUM-WELLS

被引：171

作者：

SHIELDS, AJ ^{[1
]}

PEPPER, M ^{[1
]}

RITCHIE, DA ^{[1
]}

SIMMONS, MY ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.51.18049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study quenching of neutral excitonic optical transitions in GaAs quantum wells with increasing excess electron density. This occurs abruptly at ∼1010 cm-2 with the emergence of the negatively charged exciton at lower transition energy. With further increasing density X- evolves smoothly into the Fermi-edge singularity. Polarized magneto-optical spectra confirm our assignment. © 1995 The American Physical Society.

引用

页码：18049 / 18052

页数：4

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