CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CDTE GROWN BY A MODIFIED THM

被引：12

作者：

TAGUCHI, T ^{[1
]}

SHIRAFUJI, J ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1051/rphysap:01977001202018900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：189 / 193

页数：5

共 15 条

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[2]

Bertolini G, 1968, SEMICONDUCTOR DETECT

[3]

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[4] OPTICAL QUENCHING IN CDTE DETECTORS [J].

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[5]

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MAYER J, 1968, J APPL PHYS, V39, P2818

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MAYER J, 1973, IEEE T NUCL SCI, V20, P221

[9] HOLE MOBILITY AND POOLE-FRENKEL EFFECT IN CDTE [J].

OTTAVIANI, G ;

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :360-371

[10] CHARGE CARRIER TRANSPORT PROPERTIES OF SEMICONDUCTOR-MATERIALS SUITABLE FOR NUCLEAR RADIATION DETECTORS [J].

OTTAVIANI, G ;

CANALI, C ;

ALBERIGIQUARANTA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) :192-204

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