DIELECTRIC RESPONSE OF STRAINED GE-SI SUPERLATTICES - THEORY AND EXPERIMENT

被引：3

作者：

SCHMID, U ^{[1
]}

LUKES, F ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

ALOUAN, M ^{[1
]}

CARDONA, M ^{[1
]}

KASPER, E ^{[1
]}

KIBBEL, H ^{[1
]}

PRESTING, H ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

INTERBAND-TRANSITIONS; LAYER SUPERLATTICES; GE/SI SUPERLATTICES; OPTICAL-PROPERTIES; SIXGE1-X ALLOYS; PHOTOLUMINESCENCE; GERMANIUM;

D O I：

10.1016/0921-5107(91)90178-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental as well as theoretical data for the linear optical response of symmetrically strained Ge4Si6[001] superlattices. Ab initio calculations show that the superlattice considered has a direct gap at about 1.1 eV. The lowest direct transitions are dipole allowed, although they are rather weak. The complex dielectric function has been measured with a rotating analyser ellipsometer. Excellent agreement of the experimental second-derivative spectrum d2-epsilon-2/d-omega-2 with the theory is obtained after the calculated epsilon-2(omega) has been convoluted with a lorentzian to include effects of lifetime broadening, both for the shape and position of bulk-like and for new superlattice-like transitions. A detailed analysis of the observed structures in terms of interband transitions is given.

引用

页码：233 / 236

页数：4

共 23 条

[1] SPACE-GROUPS AND LATTICE-DYNAMICS OF GE/SI SUPERLATTICES GROWN IN THE [001] DIRECTION [J].

ALONSO, MI ;

CARDONA, M ;

KANELLIS, G .

SOLID STATE COMMUNICATIONS, 1989, 69 (05) :479-483

[2]

ALONSO MI, 1989, SOLID STATE COMMUN, V70, P1

[3] INTERBAND-TRANSITIONS IN ULTRATHIN GAAS-ALAS SUPERLATTICES [J].

ALOUANI, M ;

GOPALAN, S ;

GARRIGA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW LETTERS, 1988, 61 (14) :1643-1646

[4] CALCULATED OPTICAL-PROPERTIES OF SEMICONDUCTORS [J].

ALOUANI, M ;

BREY, L ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 37 (03) :1167-1179

[5] LINEAR METHODS IN BAND THEORY [J].

ANDERSEN, OK .

PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083

[6]

Cardona M., 1989, PROGR ELECTRON PROPE, V10, P51, DOI 10.1007/978-94-009-2419-2

[7]

GOPALAN S, 1989, PHYS REV B, V39, P5156

[8] OPTICAL-SPECTRA OF SIXGE1-X ALLOYS [J].

HUMLICEK, J ;

GARRIGA, M ;

ALONSO, MI ;

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) :2827-2832

[9] VIBRATIONAL-MODES IN GERMANIUM-RICH SIXGE1-X ALLOYS [J].

HUMLICEK, J ;

NAVRATIL, K ;

KEKOUA, MG ;

KHOUTSISHVILI, EV .

SOLID STATE COMMUNICATIONS, 1990, 76 (03) :243-246

[10] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J].

KASPER, E ;

KIBBEL, H ;

JORKE, H ;

BRUGGER, H ;

FRIESS, E ;

ABSTREITER, G .

PHYSICAL REVIEW B, 1988, 38 (05) :3599-3601

← 1 2 3 →