MOVPE GROWTH OF GAAS GAALAS STRUCTURES ON GAAS AND GE SUBSTRATES FOR SOLAR-CELL DEVICES

被引：7

作者：

FLORES, C

BOLLANI, B

CAMPESATO, R

PALETTA, F

PASSONI, D

TIMO, G

TOSONI, A

机构：

[1] CISE Spa, 20090 Segrate

来源：

SOLAR ENERGY MATERIALS | 1991年 / 23卷 / 2-4期

关键词：

D O I：

10.1016/0165-1633(91)90141-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaAs/GaAlAs multilayer structures were grown by MOVPE on GaAs and Ge substrates to fabricate space solar cells. The cells were characterized in AM0 conditions and in a wide range of temperatures (-185-degrees-C to +50-degrees-C) to simulate the space conditions. Irradiation tests with 1 MeV electrons were also carried out. The GaAs cells grown on GaAs substrates are characterized by an AM0 efficiency of 21.2%; the efficiency reaches 28.6% at -180-degrees-C AM2.

引用

页码：356 / 362

页数：7