SILICON BORON DELTA DOPED FET - GROWTH AND FABRICATION

被引：7

作者：

BISWAS, RG

MATTEY, NL

PHILLIPS, PJ

NEWSTEAD, SM

WHALL, TE

TAYLOR, S

GUNDLACH, A

机构：

[1] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,ENGLAND

[2] UNIV EDINBURGH,EDINBURGH MICROFABRICAT FACIL,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of the first boron delta doped field-effect transistor is described. Molecular beam epitaxy was used to grow the delta doped layers and a low temperature processing schedule has been adopted, including the use of a plasma enhanced oxide growth to form the gate dielectric.

引用

页码：667 / 669

页数：3

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