INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON

被引：13

作者：

KARASYUK, VA ^{[1
]}

THEWALT, MLW ^{[1
]}

AN, S ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

机构：

[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.73.2340

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High resolution near-infrared photoluminescence and photoluminescence excitation spectroscopy of excitons bound to the shallow acceptor Al in Si provide clear evidence of an intrinsic 0.1 cm(-1) splitting of the neutral acceptor ground state. This is contrary to the very widespread expectation that in the absence of perturbations the neutral acceptor ground state is the fourfold degenerate Gamma(8) level. Similar results for Ga and In accepters are briefly described, underlining the generality of the observed effect.

引用

页码：2340 / 2343

页数：4

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