ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON

被引：134

作者：

CHAPMAN, PW

TUFTE, ON

ZOOK, JD

LONG, D

机构：

来源：

关键词：

D O I：

10.1063/1.1729180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3291 / &

共 23 条

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