DIRECT-GAP SI/GE SUPERLATTICES

被引:25
作者
GELL, M
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 03期
关键词
D O I
10.1103/PhysRevB.40.1966
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1966 / 1968
页数:3
相关论文
共 10 条
[1]  
GELL M, UNPUB
[2]   ZONE FOLDING AND SUBBAND DISPERSIONS IN GAAS-ALXGA1-XAS(001) SUPERLATTICES [J].
GELL, MA ;
HERBERT, DC .
PHYSICAL REVIEW B, 1987, 35 (18) :9591-9604
[3]   EFFECT OF BUFFER-LAYER COMPOSITION ON NEW OPTICAL-TRANSITIONS IN SI/GE SHORT-PERIOD SUPERLATTICES [J].
GELL, MA .
PHYSICAL REVIEW B, 1988, 38 (11) :7535-7553
[4]  
GELL MA, 1986, THESIS U NEWCASTLE U
[5]   THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].
GNUTZMAN.U ;
CLAUSECK.K .
APPLIED PHYSICS, 1974, 3 (01) :9-14
[6]   THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J].
HYBERTSEN, MS ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1987, 36 (18) :9683-9693
[7]   SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J].
KASPER, E ;
KIBBEL, H ;
JORKE, H ;
BRUGGER, H ;
FRIESS, E ;
ABSTREITER, G .
PHYSICAL REVIEW B, 1988, 38 (05) :3599-3601
[8]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&
[9]   STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J].
PEARSALL, TP ;
BEVK, J ;
FELDMAN, LC ;
BONAR, JM ;
MANNAERTS, JP ;
OURMAZD, A .
PHYSICAL REVIEW LETTERS, 1987, 58 (07) :729-732
[10]   THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM [J].
VAN DE WALLE, CG ;
MARTIN, RM .
PHYSICAL REVIEW B, 1986, 34 (08) :5621-5634