DEFINING RANDOM SPECTRUM AS USED IN CHANNELING TECHNIQUE OF NUCLEAR BACKSCATTERING

[1] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[2] DAVIES JA, 1968, CAN J PHYS, V165, P345

[3] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &

[4] Westmoreland J. E., 1970, Radiation Effects, V6, P161, DOI 10.1080/00337577008236293

[5] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2031 - &

[6] ZIEGLER JF, UNPUBLISHHED

[1] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[2] DAVIES JA, 1968, CAN J PHYS, V165, P345

[3] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &

[4] Westmoreland J. E., 1970, Radiation Effects, V6, P161, DOI 10.1080/00337577008236293

[5] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2031 - &

[6] ZIEGLER JF, UNPUBLISHHED