THE DEPENDENCE OF THE RESISTANCE PROFILE IN SILICON IRRADIATED WITH HYDROGEN AND HELIUM-IONS ON THE ION ENERGY AND FLUENCE

被引：3

作者：

BULGAKOV, YV

KOLOMENSKAYA, TI

KUZNETSOV, NV

YATSENKO, LA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 61卷 / 01期

关键词：

D O I：

10.1002/pssa.2210610158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：K77 / K79

页数：3

相关论文

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[1] DISTRIBUTION OF RADIATION DEFECTS IN SILICON IRRADIATED WITH FAST CHARGED PARTICLES [J].

BULGAKOV, YV ;

KOLOMENSKAYA, TI ;

KUMAKHOV, MA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03) :591-+

[2]

BULGAKOV YV, 1976, INTERACTION ATOMIC 2, P30

[3]

BULGAKOV YV, 1979, 10TH C PROBL APPL CH

[4]

BULGAKOV YV, 1972, MIKROELEKTRONIKA, V1, P168