NUMERICAL-ANALYSIS OF PHOTOENHANCED ELECTRIC CURRENTS IN MOLECULAR MATERIALS

This paper presents numerical calculations of photoenhanced current-applied voltage and photoenhanced current-light intensity characteristics with regard to the exciton diffusion length, lifetime of excitons and rate of exciton surface quenching. Dependencies of this type cannot be obtained analytically. It is shown that the increase in diffusion length causes the decrease in current in the case of strong surface quenching of excitons. Simultaneously, it is shown that the quality of crystals influences the photoenhanced current. A better quality of crystals causes the increase in the current in the case of weak surface quenching of excitons.