LEAKAGE MECHANISMS IN THE TRENCH TRANSISTOR DRAM CELL

被引：17

作者：

BANERJEE, S ^{[1
]}

COLEMAN, D ^{[1
]}

RICHARDSON, W ^{[1
]}

SHAH, A ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

关键词：

D O I：

10.1109/16.2425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：108 / 116

页数：9

共 14 条

[1] BANERJEE S, 1986, P S VLSI TECH, P79
[2] BUTCHER P, 1962, SOLID STATE ELECTRON, V3, P358
[3] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[4] Lu N., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P771
[5] MOLL J, 1964, PHYSICS SEMICONDUCTO, P262
[6] MOSLEHI M, 1984, IEDM, P147
[7] MULLER R, 1977, DEVICE ELECTRONICS I, P135
[8] ODWYER JJ, 1973, THEORY ELECTRICAL CO, P77
[9] PINTO MR, 1984, PISCES 2 USERS MANUA
[10] Rao K. V., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P140