INFLUENCE OF ELECTRIC FIELD ON EXCITON ABSORPTION IN GERMANIUM

被引：9

作者：

ARONOV, AG

MOCHAN, IV

ZEMSKII, VI

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 45卷 / 02期

关键词：

D O I：

10.1002/pssb.2220450203

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：395 / &

共 10 条

[1]

BALSLEV J, 1966, PHYS REV, V143, P636

[2] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[3]

FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484

FROVA, A ;

HANDLER, P .

PHYSICAL REVIEW, 1965, 137 (6A) :1857-&

[5]

FROVA A, 1966, PHYS REV, V145, P513

HAMAKAWA, Y ;

GERMANO, FA ;

HANDLER, P .

PHYSICAL REVIEW, 1968, 167 (03) :703-&

[7]

KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P1138

[8] EXCITON ENERGY LEVELS IN GERMANIUM AND SILICON [J].

MCLEAN, TP ;

LOUDON, R .

[9]

MCLEAN TP, 1960, PROGR SEMICOND, V5, P53

[10]

Zemskii V. I., 1969, Fizika Tverdogo Tela, V11, P2633