ANALYSIS AND OPTIMIZATION OF X-RAY MASKS USING FINITE-ELEMENT METHODS

被引：3

作者：

LAIRD, DL

LENIUS, PE

ENGELSTAD, RL

CERRINA, F

机构：

[1] Center for X-ray Lithography, University of Wisconsin-Madison, Stoughton, WI 53589-3097

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0167-9317(92)90043-Q

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of stable, low-distortion masks is one key to the success of x-ray lithography. The 0.25-mu-m critical dimensions desired required that the membrane distortions due to mounting be minimized. This paper presents some of the analyses, optimizations, and modelling techniques developed at the Center for X-ray Lithography in the area of mask mounting.

引用

页码：209 / 213

页数：5

共 5 条

[1]

Lenius, Engelstad, Palmer, Brodsky, Cerrina, Mechanical distortions of support frames for x-ray lithography masks, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8, (1990)

[2]

Wilson, Et al., Control of fixturing-induced distortion in x-ray masks, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 7, (1989)

[3]

Laird, Engelstad, Palmer, Proc. TECHCON, (1990)

[4]

Laird, Engelstad, Proc. SPIE Symposium on Microlithography, (1991)

[5]

Laird, Engelstad, J. Vac. Sci. Technol. B, 8, (1991)

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