HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS IN GA1-XINXAS/INP HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE

被引:8
作者
MENU, EP
MORONI, D
PATILLON, JN
NGO, T
ANDRE, JP
机构
关键词
D O I
10.1016/0022-0248(86)90573-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:920 / 927
页数:8
相关论文
共 27 条
[1]   SUBBAND STRUCTURE OF AN ACCUMULATION LAYER UNDER STRONG MAGNETIC-FIELDS [J].
ANDO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (02) :411-417
[2]  
ANDRE JP, 1985, ELECTRONIC MATERIALS
[3]  
ANDRE JP, 1985, IOOC ECOC 85 VENICE
[5]  
COX HM, 1985, ELECTRONIC MATERIALS
[6]   TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].
DELESCLUSE, P ;
LAVIRON, M ;
CHAPLART, J ;
DELAGEBEAUDEUF, D ;
LINH, NT .
ELECTRONICS LETTERS, 1981, 17 (10) :342-344
[7]   SPECTROSCOPIC ELLIPSOMETRY STUDY OF INP, GALNAS, AND GALNAS/INP HETEROSTRUCTURES [J].
ERMAN, M ;
ANDRE, JP ;
LEBRIS, J .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2019-2025
[8]   PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS [J].
FRY, KL ;
KUO, CP ;
COHEN, RM ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :955-957
[9]   OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
GOETZ, KH ;
BIMBERG, D ;
JURGENSEN, H ;
SELDERS, J ;
SOLOMONOV, AV ;
GLINSKII, GF ;
RAZEGHI, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552
[10]   TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
GULDNER, Y ;
VIEREN, JP ;
VOISIN, P ;
VOOS, M ;
RAZEGHI, M ;
POISSON, MA .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879