EPITAXIAL LAYERS OF CUINSE2 ON GAAS

被引：68

作者：

SCHUMANN, B ^{[1
]}

GEORGI, C ^{[1
]}

TEMPEL, A ^{[1
]}

KUHN, G ^{[1
]}

VANNAM, N ^{[1
]}

NEUMANN, H ^{[1
]}

HORIG, W ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT PHYS,DDR-701 LEIPZIG,GER DEM REP

来源：

THIN SOLID FILMS | 1978年 / 52卷 / 01期

关键词：

D O I：

10.1016/0040-6090(78)90253-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInSe2 single-crystal films with (112) orientation and with thicknesses in the range 800-1200 Å were deposited onto semi-insulating (111)A-oriented GaAs substrates by flash evaporation under controlled growth conditions. Epitaxial growth began at a substrate temperature Tsub = 720 K and twins in the 〈221〉 direction were detected in reflection high energy electron diffraction investigations. The twin concentration decreased with increasing growth temperature. At Tsub = 870 K a change of the structure from chalcopyrite to sphalerite was observed. Films produced at Tsub ≤ 720 K showed n-type conductivity whereas at higher growth temperatures the films were always p type and showed a rapid increase in hole concentration with increasing substrate temperature. Two different acceptor levels with ionization energies of 92 meV and about meV were found. © 1978.

引用

页码：45 / 52

页数：8

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