INFLUENCE OF A MAGNETIC-FIELD ON 1-F NOISE IN AMBIPOLAR SEMICONDUCTORS - EVIDENCE OF ITS SURFACE ORIGIN

被引：9

作者：

DILMI, T

CHOVET, A

VIKTOROVITCH, P

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs, ERA CNRS No. 659, Institut National Polytechnique, 38031 Grenoble Cedex, Enserg, 23, rue des Martyrs

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a transverse magnetic field on the electrical noise in ambipolar semiconductors (like intrinsic and near-intrinsic germanium) is investigated as a function of surface treatment. When the transport of carriers across the sample is governed by the magnetoconcentration effect, it is shown that the very large increase of the 1/f noise is due to 1/f fluctuations of surface recombination velocities. Such fluctuations (which furthermore are proportional to the surface recombination velocity) also account for the most part of the highest frequency noise (beyond the inverse of the carrier effective lifetime).

引用

页码：5348 / 5350

页数：3

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