RESONANT-TUNNELING IN THE PRESENCE OF A 2-LEVEL FLUCTUATOR - LOW-FREQUENCY NOISE

被引:12
作者
GALPERIN, YM
CHAO, KA
机构
[1] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA
[2] UNIV TRONDHEIM, NORWEGIAN INST TECHNOL, DEPT MATH & PHYS, DIV PHYS, N-7034 TRONDHEIM, NORWAY
关键词
D O I
10.1103/PhysRevB.52.12126
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study current noise in a double-barrier resonant-tunneling structure due to dynamic defects that switch states because of their interaction with a thermal bath. The time fluctuations of the resonant level result in low-frequency noise, the characteristics of which depend on the relative strengths of the electron escape rate, the coupling to the defects, and the defect's switching rate. If the number of defects is sufficiently large, the noise is of the 1/f type. It is shown that the temperature dependence of the noise intensity becomes more pronounced as the spacer gets thicker.
引用
收藏
页码:12126 / 12134
页数:9
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