A REVIEW OF COMPOSITION-STRUCTURE-PROPERTY RELATIONSHIPS FOR PZT-BASED HETEROSTRUCTURE CAPACITORS

被引：21

作者：

AUCIELLO, O ^{[1
]}

GIFFORD, KD ^{[1
]}

LICHTENWALNER, DJ ^{[1
]}

DAT, R ^{[1
]}

ALSHAREEF, HN ^{[1
]}

BELLUR, KR ^{[1
]}

KINGON, AI ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Studies performed by our group on composition-structure-property relationships of Pb(ZrxTi1-x)O-3 (PZT)-based heterostructure capacitors are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO2, and La0.5Sr0.5CoO3 layers and their integration into heterostructure capacitors suitable for non-volatile memories. The main objective of our research was to determine the influence of deposition parameters and layer processing on the composition, structure, and properties of PZT-based capacitors, with the goal of controlling fatigue, retention, and imprint effects. The work discussed relates mainly to the synthesis of films by ion beam sputter-deposition (IBSD) and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Limited comparisons are presented between structural characteristics and properties of PZT capacitors produced by IBSD and PLAD and those synthesized by the sol-gel technique. The work reviewed indicates that the substrate, template layer and/or bottom electrode material type contribute to the control of composition, structure, and properties of PZT-based capacitors.

引用

页码：173 / 187

页数：15

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