ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS

被引：68

作者：

KELLY, MJ ^{[1
]}

FALICOV, LM ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.15.1974

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1974 / 1982

页数：9

共 22 条

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