THERMAL BREAKDOWN DELAY TIME IN SILICON P-N JUNCTIONS

被引：2

作者：

FLEMING, DJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 02期

关键词：

D O I：

10.1109/T-ED.1971.17155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：94 / +

页数：1

共 14 条

[1]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, pCH10

[2] EMISSION OF VISIBLE RADIATION FROM EXTENDED PLASMAS IN SILICON DIODES DURING SECOND BREAKDOWN [J].

DUMIN, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :479-+

[3] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS [J].

ENGLISH, AC .

SOLID-STATE ELECTRONICS, 1963, 6 (05) :511-521

[4] PHYSICAL INVESTIGATION OF MESOPLASMA IN SILICON [J].

ENGLISH, AC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :662-+

[5] INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS [J].

FERRY, DK ;

DOUGAL, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :627-+

[6] TEMPERATURE COEFFICIENT OF BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS [J].

HALL, R .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) :513-&

[7] THERMAL BREAKDOWN IN SILICON P-N JUNCTION DEVICES [J].

KHURANA, BS ;

SUGANO, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :763-&

[8] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J].

MAYCOCK, PD .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :161-&

[9] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

PHYSICAL REVIEW, 1955, 99 (04) :1234-1241

[10]

MOLL J, 1964, SEMICONDUCTOR PHYSIC

← 1 2 →