GROWTH AND CHARACTERIZATION OF TIN OXIDE THIN-FILMS PREPARED BY REACTIVE SPUTTERING

被引:9
作者
DIGIULIO, M [1 ]
MANNO, D [1 ]
MICOCCI, G [1 ]
RELLA, R [1 ]
SICILIANO, P [1 ]
TEPORE, A [1 ]
机构
[1] CNR,IST MAT ELETTR,I-73100 LECCE,ITALY
关键词
D O I
10.1016/0927-0248(93)90054-7
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Optical and electrical measurements have been carried out on SnO2 thin films obtained by RF reactive sputtering and thermally annealed at different temperatures. Transmission electron microscopy observations have been also performed in order to analyze the evolution of the structure and the morphology of the films with the heat treatment. The optical observation results indicate that in the range of incident photon energy between 3 and 5.5 eV both direct and indirect transitions take place in the analyzed films. The variation of the Hall mobility and conductivity with the annealing temperature can be ascribed to increase in the grain size and to decrease in the oxygen vacancies of the films after heat-treatment.
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页码:235 / 242
页数:8
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