CHARGED DEFECT-PAIR LUMINESCENCE IN A-AS2S3

被引:45
作者
HIGASHI, GS [1 ]
KASTNER, M [1 ]
机构
[1] MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 21期
关键词
D O I
10.1088/0022-3719/12/21/003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The first measurements of total light decay of photoluminescence (PL) of a chalcogenide glass in the time regime >100 ns are reported. The time decay is described by t-m exp(- nu 2t) where m=1- delta +T/T 0, at temperature T with nu 2-1=1.4 ms, delta =0.1, T0=300K. These results allow a microscopic description of PL in a-As2S3 and indicate that PL may arise from charge-transfer de-excitation of defect pairs.
引用
收藏
页码:L821 / L826
页数:6
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