THE CHARGE-PUMPING TECHNIQUE FOR GRAIN-BOUNDARY TRAP EVALUATION IN POLYSILICON TFTS

被引：26

作者：

KOYANAGI, M

BABA, Y

HATA, K

WU, IW

LEWIS, AG

FUSE, M

BRUCE, R

机构：

[1] FUJI XEROX CO LTD,KANAGAWA 24304,JAPAN

[2] XEROX CORP,PALO ALTO RES CTR,ELECTR & IMAGING LAB,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期

关键词：

Electric Measurements--Current - Semiconducting Silicon--Applications - Transistors--Measurements;

D O I：

10.1109/55.144994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polysilicon thin-film transistor (poly-Si TFT) characteristics are evaluated by using the charge-pumping technique for the first time. The recombination current at the grain boundary traps is measured as the charge-pumping current in this technique. Therefore, the influence of the grain boundary traps is directly evaluated. It is confirmed that a large number of acceptor-like and donor-like traps exist at the grain boundaries in poly-Si TFT's. The trap density is derived from the pulse fall-time dependence of the charge-pumping current. The influence of process temperature on trap properties is examined using the charge-pumping technique.

引用

页码：152 / 154

页数：3