INTERNAL FIELD EMISSION AT NARROW P-N JUNCTIONS IN INDIUM ANTIMONIDE

[1] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[2] CHYNOWETH AG, IN PRESS

[3] ESAKI L, COMMUNICATION

[4] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (04) : 167 - 168

[5] HROSTOWSKI, 1955, PHYS REV, V100, P1672

[6] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763

[7] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665

[8] LEE CA, 1959, UNPUB OCT EL SOC SEM

[9] Roberts V., 1955, J ELECTRONICS, V1, P152

[10] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 219 - 223

[1] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[2] CHYNOWETH AG, IN PRESS

[3] ESAKI L, COMMUNICATION

[4] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (04) : 167 - 168

[5] HROSTOWSKI, 1955, PHYS REV, V100, P1672

[6] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763

[7] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665

[8] LEE CA, 1959, UNPUB OCT EL SOC SEM

[9] Roberts V., 1955, J ELECTRONICS, V1, P152

[10] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 219 - 223