CREATION AND PASSIVATION OF ELECTRON TRAPS IN N-INP TREATED WITH HYDROGEN PLASMA

被引：25

作者：

SUGINO, T ^{[1
]}

NINOMIYA, H ^{[1
]}

YAMADA, T ^{[1
]}

SHIRAFUJI, J ^{[1
]}

MATSUDA, K ^{[1
]}

机构：

[1] HORIBA LTD,MINAMI KU,KYOTO 601,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.107413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Studies on deep electron traps in n-InP treated with hydrogen plasma have been performed using isothermal capacitance transient spectroscopy measurements. Five electron trap levels, E1-E5, with activation energies of 0.21, 0.51, 0.32, 0.54, and 0.63 eV, respectively, below the conduction band are detected. Only E1 traps are observed in as-etched InP. Hydrogen-plasma treatment leads to enhancement of the density of E1 traps and creation of E2 and E5 traps. E1 and E5 traps are annealed out at 300-degrees-C, while E2 traps are annealed out at a temperature as low as 150-degrees-C. On the other hand, densities of E3 and E4 traps are significantly enhanced by annealing at 350-degrees-C. This experimental result suggests that the E3 and E4 traps are generated during hydrogen-plasma exposure and are passivated by hydrogen atoms.

引用

页码：1226 / 1228

页数：3

共 21 条

[1]

ANDO K, 1986, PHYS REV B, V34, P3041, DOI 10.1103/PhysRevB.34.3041

[2] HYDROGEN PASSIVATION OF ACCEPTORS IN P-INP [J].